Local micro-photoreflectance spectroscopy measurements on type II InGaAlAs/GaAsSb/InP heterojunction bipolar transistor: Correlation with electrical characteristics
نویسندگان
چکیده
منابع مشابه
Simulation of electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor
The electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor (DHBT) are investigated. The study is based on energy balance (EB) transport model and TCAD SILVACO device simulator. InP/In0.24Ga0.76As0.73Sb0.27 DHBT have a low Emitter-Base conduction band discontinuity EC and a minimum base bandgap energy EG among the entire composition ran...
متن کاملGaAs Heterojunction Bipolar Transistor Emitter Design
We demonstrate that GaAs-based HBTs with very low base currents at both low and high injection levels can be achieved using either Al0.35Ga0.65As or InGaP in the emitter with the proper optimization of structure and growth. We observe an order of magnitude reduction in space charge recombination current as the Al composition, and hence the energy-gap, of the emitter increases from 25% (1.77 eV)...
متن کاملAn enhanced model for InGaP/GaAs heterojunction bipolar transistor
This paper presents an improved InGaP/GaAs heterojunction bipolar transistor (HBT) model based on the Vertical Bipolar Inter-Company (VBIC) model. New transport current expression is proposed by considering the heterojunction effect. Collector capacitance is developed due to the mobile charge modulation, and the transit time formula is improved to account for electron velocity variation with th...
متن کاملA Custom Iii-v Heterojunction Bipolar Transistor Model
Communication systems today comprise the major use of GaAs technology with the highest volumes found in the cellular handset front-end. Here, heterojunction bipolar transistor (HBT) power amplifiers (PA) and Pseudomorphic High Electron Mobility Transistor (PHEMT) switches enjoy a comfortable market share. In this environment, the demands of production design require a robust CAD system with acc...
متن کاملSilicon Germanium Heterojunction Bipolar Transistor for Digital Application
Bipolar transistor performances can be characterized by figures of merit such as cut-off frequency, maximum frequency of oscillation and Emitter Coupled Logic gate delay. We studied the required figures of merit for digital application and the effects of lateral and vertical scaling to the figures of merit of SiGe Heterojunction Bipolar Transistor. With lateral scaling, the width of emitter fin...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2012
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4705408